The paper presents a temperature gradient based method for device state evaluation, taking the insulated Gated Bipolar Transistor (IGBT) modules as an example investigation. Firstly, theoretical basis of this method is presented and the results from example calculation on temperature gradient indicate that the increased thermal resistance and power loss of IGBT modules would increase the temperature gradient. Then an electrical-thermal- mechanical finite element method (FEM) model of IGBT modules, which takes the material temperature-dependent characteristic into account, is utilized to estimate the temperature gradient distribution for both healthy and fatigue conditions. It is found that the temperature gradient varies with power loss. Furthermore, both the experimental and simulation investigation on the temperature gradient for different conditions were conducted, and it is concluded that the temperature gradient can not only track the change of power loss, but have a better sensitivity compared with temperature distribution. In addition, the temperature gradient can reflect the defects location and distinguish failures degree. In the end the influence on the temperature gradient distribution caused by solder fatigue, void and delamination are discussed.
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